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2SC3979

Part Number	2SC3979
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Saf...
Datasheet	2SC3979 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.
) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3979 · isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3979 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER C...

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