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2SD743

INCHANGE
Part Number 2SD743
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD743 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Cur...
Datasheet PDF File 2SD743 PDF File

2SD743
2SD743

Overview
isc Silicon NPN Power Transistor 2SD743 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40~200 @IC= 0.
5A ·Complement to Type 2SB703 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier, low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.
125 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
3A 2.
0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.
3A 2.
0 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 μA hFE-1 DC Current Gain IC= 20mA; VCE= 5V 20 hFE-2 DC Current Gain IC= 0.
5A; VCE= 5V 40 200 fT Current-Gain—Bandwidth Product IC= 0.
1A; VCE= 5V; ftest= 1.
0MHz 10 MHz  hFE-2 Classifications S R Q 40-80 60-120 100-200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications ...


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