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2SD856

INCHANGE
Part Number 2SD856
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity...
Datasheet PDF File 2SD856 PDF File

2SD856
2SD856

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB761 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD856 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
375A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICES Collector Cutoff Current VCE= 60V; VBE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 4V hFE-2 DC Current Gain IC= 3A; VCE= 4V Switching Times ton Turn-On Time toff Turn-Off Time IC= 1A; IB1= IB2= 0.
1A  hFE-1 Classifications R Q P 40-90 70-150 120-250 2SD856 MIN TYP.
MAX UNIT 60 V 1.
2 V 1.
8 V 300 μA 200 μA 1 mA 40 250 10 0.
5 μs 3.
0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in...


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