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2SD868

Part Number	2SD868
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Co...
Datasheet	2SD868 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.
0V(Max.
)@ IC= 2A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.
5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 1.
0 A 50 W 150 ℃ Tstg...

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