DatasheetsPDF.com

2SD1138

Part Number	2SD1138
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Ar...
Datasheet	2SD1138 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB861 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperat...

Similar Datasheet

2SD110 Silicon NPN Power Transistor - Inchange Semiconductor Company
2SD1101 NPN TRANSISTOR - Hitachi Semiconductor
2SD1101 Silicon NPN Transistor - Guangdong Kexin Industrial
2SD1101 Silicon NPN Transistor - Renesas
2SD1105 Silicon NPN Power Transistor - Inchange Semiconductor Company
2SD111 Silicon NPN Power Transistor - INCHANGE
2SD1110 NPN Transistor - INCHANGE
2SD1110 SILICON POWER TRANSISTOR - SavantIC
2SD1111 NPN TRANSISTOR - Sanyo Semicon Device
2SD1113 Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)