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BDT32C

INCHANGE
Part Number BDT32C
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 22, 2020
Detailed Description isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitte...
Datasheet PDF File BDT32C PDF File

BDT32C
BDT32C

Overview
isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.
0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C ·Complement to Type BDT31/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER BDT32 VALUE -80 UNIT BDT 32A -100 VCBO Collector-Base Voltage V BDT 32B -120 BDT 32C -140 BDT32 -40 BDT 32A -60 VCEO Collector-Emitter Voltage V BDT 32B -80 BDT 32C -100 VEBO ...


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