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BDW51B

INCHANGE
Part Number BDW51B
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Vol...
Datasheet PDF File BDW51B PDF File

BDW51B
BDW51B

Overview
isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C ·Complement to Type BDW52/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW51 45 VCBO Collector-Base Voltage BDW51A 60 V BDW51B 80 BDW51C 100 BDW51 45 VCEO Collector-Emitter Voltage BDW51A 60 V BDW51B 80 BDW51C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 125 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.
4 UNIT ...


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