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2MBI1400VXB-120E-50

Fuji Electric
Part Number 2MBI1400VXB-120E-50
Manufacturer Fuji Electric
Description IGBT
Published Sep 23, 2020
Detailed Description http://www.fujielectric.com/products/semiconductor/ 2MBI1400VXB-120E-50 IGBT Modules IGBT MODULE (V series) 1200V / ...
Datasheet PDF File 2MBI1400VXB-120E-50 PDF File

2MBI1400VXB-120E-50
2MBI1400VXB-120E-50

Overview
http://www.
fujielectric.
com/products/semiconductor/ 2MBI1400VXB-120E-50 IGBT Modules IGBT MODULE (V series) 1200V / 1400A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Inverter Ic Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso Mounting Screw torque (*3) Main Terminals - Sense Terminals Conditions Continuous 1ms 1ms 1 device Tc=25°C Tc=100°C AC : 1min.
M5 M8 M4 Maximum ratings 1200 ±20 1800 1400 2800 1400 2800 7650 175 150 150 -40 ~ +150 4000 6.
0 10.
0 2.
1 Units V V A W °C VAC Nm Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting 3.
0 ~   6.
0 Nm (M5) Recommendable Value : Main Terminals 8.
0 ~ 10.
0 Nm (M8) Recommendable Value : Sense Terminals  1.
8 ~ 2.
1 Nm (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Thermistor Inverter Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Resistance B value Symbols ICES IGES VGE (th) VCE (sat) (terminal) (*4) VCE (sat) (chip) Rg(int) Cies ton tr tr (i) t...


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