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BU306F

INCHANGE
Part Number BU306F
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min...
Datasheet PDF File BU306F PDF File

BU306F
BU306F


Overview
isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BU306F 600 VCBO Collector-Base Voltage V BU307F 700 BU306F 300 VCEO Collector-Emitter Voltage V BU307F 400 VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.
12 ℃/W isc website:www.
iscsemi.
co...



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