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BU406FI

Part Number	BU406FI
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·High Voltage ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Min...
Datasheet	BU406FI PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·High Voltage ·Low Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators and motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage BU406FI 400 V BU407FI 330 VCEO Collector-Emitter Voltage BU406FI 200 V BU407FI 150 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissip...

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