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BUX67B

INCHANGE
Part Number BUX67B
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·...
Datasheet PDF File BUX67B PDF File

BUX67B
BUX67B

Overview
isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.
5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX67 200 BUX67A 300 VCBO Collector-Base Voltage V BUX67B 350 BUX67C 400 BUX67 150 BUX67A 250 VCEO Collector-Emitter Voltage V BUX67B 30...


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