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BDX33

INCHANGE
Part Number BDX33
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor BDX33 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(...
Datasheet PDF File BDX33 PDF File

BDX33
BDX33

Overview
isc Silicon NPN Darlington Power Transistor BDX33 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.
5V(Max.
)@ IC= 4A ·Complement to Type BDX34 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 45 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
25 70 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
78 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsem...


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