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BU415B

INCHANGE
Part Number BU415B
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min) ·High Switchi...
Datasheet PDF File BU415B PDF File

BU415B
BU415B

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak Repetitive 15 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU4...


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