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BU508DX

Part Number	BU508DX
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Int...
Datasheet	BU508DX PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.
) ·Collector Current- IC = 8.
0A ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8.
0 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 45 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
8 ℃/W BU508DX isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU508DX ELECTRICAL CHARACTERISTICS TC=...

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