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2N6217

Part Number	2N6217
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 25, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter S...
Datasheet	2N6217 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for linear power and switching amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 180 V 140 V VEBO IC PC TJ Tstg Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=100℃ 71 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETE...

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