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2N6290

Part Number	2N6290
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= 2.5A ·Collector-Emitter Sustaining V...
Datasheet	2N6290 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= 2.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) ·Complement to Type 2N6109 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W...

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