DatasheetsPDF.com

2SA1283

Part Number	2SA1283
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Transistor DESCRIPTION ·High Voltage and High Current Vceo=-60V(Min.） ·Excellent hFE Linearity ·Low Noi...
Datasheet	2SA1283 PDF File

Overview

isc Silicon PNP Transistor DESCRIPTION ·High Voltage and High Current Vceo=-60V(Min.
） ·Excellent hFE Linearity ·Low Noise ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SA1283 VALUE UNIT -60 V -60 V -6 V -1 A 900 mW 150 ℃ -55~150 ℃ isc website： www.
iscsemi.
com 1 isc &...

Similar Datasheet

2SA1200 SILICON PNP TRIPLE DIFFUSED TRANSISTOR - Toshiba Semiconductor
2SA1200 PNP Transistors - Kexin
2SA1201 Silicon PNP Transistor - Toshiba Semiconductor
2SA1201 Plastic-Encapsulate Transistors - GME
2SA1201 Plastic-Encapsulate Transistors - WILLAS
2SA1201 SILICON PNP EPITAXIAL TRANSISTOR - UTC
2SA1201 TRANSISTOR - Jin Yu Semiconductor
2SA1201 PNP Silicon Transistor - SeCoS
2SA1201 Transistors - Kexin
2SA1201 Plastic-Encapsulate Transistors - TRANSYS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)