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2SB1570

Part Number	2SB1570
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min)...
Datasheet	2SB1570 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.
5V(Max.
)@IC= -7A ·Complement to Type 2SD2401 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS ·Designed for audio,series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperat...

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