DatasheetsPDF.com

BUY79

Part Number	BUY79
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 350V(Min.) ·Low Collect...
Datasheet	BUY79 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 350V(Min.
) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max.
)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switches at high voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCES Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-peak PC Collector Power Dissipation @TC≤75℃ Tj Junction Temperature...

Similar Datasheet

BUY06CS23K-01 60V Radiation Hard power MOSFET - Infineon
BUY12 NPN Transistor - INCHANGE
BUY15CS23K-01 150V Radiation Hard power MOSFET - Infineon
BUY18S Bipolar NPN Device - Seme LAB
BUY18S NPN Transistor - INCHANGE
BUY20 NPN Transistor - INCHANGE
BUY21 NPN Transistor - INCHANGE
BUY22 NPN Transistor - INCHANGE
BUY23 NPN Transistor - INCHANGE
BUY24 NPN Transistor - Seme LAB

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)