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MJ4502

INCHANGE
Part Number MJ4502
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= -7.5A ·Excellent Safe Operating A...
Datasheet PDF File MJ4502 PDF File

MJ4502
MJ4502

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= -7.
5A ·Excellent Safe Operating Area ·Complement to the NPN MJ802 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -30 A IB Base Current-Continuous -7.
5 A PC Collector Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.
875 ℃/W MJ4502 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJ4502 ELECTRICAL CHARACTERISTIC...


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