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MJ11014

Part Number	MJ11014
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(...
Datasheet	MJ11014 PDF File

Overview

isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.
0V(Max.
)@ IC= 20A ·Complement to the PNP MJ11013 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 30 A ICM Collector Current-Peak 50 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 200 W 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
87 ℃/W isc w...

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