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MJ11012

ON Semiconductor
Part Number MJ11012
Manufacturer ON Semiconductor
Description High-Current Complementary Silicon NPN Transistors
Published Mar 26, 2005
Detailed Description MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . ....
Datasheet PDF File MJ11012 PDF File

MJ11012
MJ11012

Overview
MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors .
.
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for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to + 200_C MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc MJ11012 60 MJ11015/6 120 Collector−Base Voltage VCB Vdc MJ11012 60 MJ11015/6 120 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C Operating Storage Junction Temperature Range VEB IC IB PD TJ, Tstg 5 30 1 200 1.
15 −55 to + 200 Vdc Adc Adc W W/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes for ≤ 10 Seconds RqJC TL 0.
87 °C/W 275 ...


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