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MJ11015

Part Number	MJ11015
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·H...
Datasheet	MJ11015 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= -20A ·Low Collector Saturation Voltage- : VCE (sat)= -3.
0V(Max.
)@ IC= -20A ·Complement to the NPN MJ11016 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11015 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -30 A IB ...

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