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MJ11018

Part Number	MJ11018
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor MJ11018 DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 150...
Datasheet	MJ11018 PDF File

Overview

isc Silicon NPN Darlington Power Transistor MJ11018 DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 150V (Min.
) ·High DC Current Gain- : hFE= 400(Min.
)@IC= 10A ·Low Collector Saturation Voltage- : VCE (sat)= 1.
0V(Max.
)@ IC= 5.
0A ·Complement to the PNP MJ11017 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current-Continunous 15 ICM Collector Current-Peak 30 IB Base Current-Continunous 0.
5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 175 Tstg Storage Temperature Range -65~175 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
86 ℃/W is...

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