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MJ11028

Part Number	MJ11028
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High...
Datasheet	MJ11028 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 25A : hFE= 400(Min.
)@IC= 50A ·Complement to the PNP MJ11029 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11028 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 50 A ICM Collector Current-Peak 100 A IB Base Current-Conti...

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