isc
Silicon PNP Darlington
Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage
: V(BR)CEO= -90V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11030 ·Minimum Lot-to-Lot variati...