DatasheetsPDF.com

MJ12003

Part Number	MJ12003
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Swit...
Datasheet	MJ12003 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in CRT deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 3 A IE Emitter Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Te...

Similar Datasheet

MJ12002 2.5 Amp NPN Silicon Power Transistor - Motorols
MJ12002 NPN Transistor - INCHANGE
MJ12003 4 Amp NPN Silicon Power Transistor - Motorols
MJ12003 NPN Transistor - INCHANGE
MJ12004 NPN Transistor - INCHANGE
MJ12004 5 Amp NPN Silicon Power Transistor - Motorols
MJ12005 NPN Transistor - INCHANGE
MJ12005 NPN Silicon Transistor - Central Semiconductor
MJ12005 8 Amp NPN Silicon Power Transistor - Motorols
MJ12005D 8 Amp NPN Silicon Power Transistor - Motorols

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)