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MJ12020

Part Number	MJ12020
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·Fast Turn-...
Datasheet	MJ12020 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·Fast Turn-Off Time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high resolution video systems, such as : high density graphic displays, data terminals, video scanners.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipa...

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