isc
Silicon PNP Darlington
Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown
Voltage—
: V(BR)CEO = -80 V ·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A
·Complement to Type MJE803T ·Minimum Lot-to-Lot variations for robust...