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MJE5730

Part Number	MJE5730
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -300V(Min) ·DC current...
Datasheet	MJE5730 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -300V(Min) ·DC current gain - : hFE = 30~150@ IC= -0.
3A ·With TO-220 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IB Base Current Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1 A 2 W 40 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W ...

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