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MJF18002

INCHANGE
Part Number MJF18002
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching ...
Datasheet PDF File MJF18002 PDF File

MJF18002
MJF18002

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current 1 A IBM Base Current-Peak 2 A PD Total Power Dissipation@TC=25℃ 25 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 5.
0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.
5 ℃/W MJF18002 isc Website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Sili...


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