DatasheetsPDF.com

SFT1202

INCHANGE
Part Number SFT1202
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A...
Datasheet PDF File SFT1202 PDF File

SFT1202
SFT1202

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
165V(Max)( IC= 1A; IB= 0.
1A) ·Fast -Switching speed ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC/DC converter ·Relay dirvers ·Lamp dirvers ·Motor dirvers，inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC Ta=25℃ Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 180 V 150 V 7 V 2 A 3 A 0.
4 A 1 W 15 150 ℃ -55~150 ℃ SFT1202 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)