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2SB508

Part Number	2SB508
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB508 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SB508 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB508 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.
0V(Max) @IC= -2.
0A ·Complement to Type 2SD314 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current-Continuous -3.
0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ ...

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