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2SB515

INCHANGE
Part Number 2SB515
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB515 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet PDF File 2SB515 PDF File

2SB515
2SB515

Overview
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB515 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
0V(Max.
) @IC= -2A ·Complement to Type 2SD331 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @Tc=25℃ -5 A 1.
75 W 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB515 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specifie...


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