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2SB538

Part Number	2SB538
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB538 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet	2SB538 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB538 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -65V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -2.
0V(Max.
) @IC= -10A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -65 V VCEO Collector-Emitter Voltage -65 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature Tstg Storage Temperature -15 A 75 W...

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