DatasheetsPDF.com

2SB548

Part Number	2SB548
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB548 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SB548 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB548 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-126 package ·Complement to Type 2SD414 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Ts...

Similar Datasheet

2SB502 PNP Transistor - INCHANGE
2SB502A SILICON PNP TRANSISTOR - Toshiba
2SB503 PNP Transistor - INCHANGE
2SB503A SILICON PNP TRANSISTOR - Toshiba
2SB506 PNP Transistor - INCHANGE
2SB506 SILICON POWER TRANSISTOR - SavantIC
2SB507 PNP Transistor - INCHANGE
2SB507 Silicon PNP Power Transistors - SavantIC
2SB507 PNP Epitaxial Silicon Transistor - GME
2SB507 PNP Transistor - DC COMPONENTS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)