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2SC1108

Part Number	2SC1108
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1108 DESCRIPTION ·Low Collector Saturation Voltage ·High Cu...
Datasheet	2SC1108 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1108 DESCRIPTION ·Low Collector Saturation Voltage ·High Current 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER ...

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