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2SC2563

Part Number	2SC2563
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2563 DESCRIPTION ·High power dissipation ·Low Saturation Vo...
Datasheet	2SC2563 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2563 DESCRIPTION ·High power dissipation ·Low Saturation Voltage ·High VCBO ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency output amplifier and general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 2 A 80 W...

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