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2SC3642

Part Number	2SC3642
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3642 DESCRIPTION ·Low Collector Saturation Voltage ·High br...
Datasheet	2SC3642 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3642 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage and high reliability ·Fast switching speed ·Wide ASO ·NPN triple diffused planar silicon transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh deflection display ·Horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 12 A IB Base Curr...

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