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2SC3675

Part Number	2SC3675
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3675 DESCRIPTION ·Low Collector Saturation Voltage ·High br...
Datasheet	2SC3675 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3675 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Small Cob ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.
1 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
3 A 10 W 150 ℃ ...

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