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2SC4350

Part Number	2SC4350
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC4350 DESCRIPTION ·Collector-Emitter Sustaining V...
Datasheet	2SC4350 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC4350 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000~20000(Min) @IC= 5A ·Fast Switching Speed ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Curre...

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