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2SC4369

Part Number	2SC4369
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4369 DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCE...
Datasheet	2SC4369 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4369 DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1658 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5.
0 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC= 25℃ TJ Junction Temperature Tstg Storage Temperature 0.
3 A 1...

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