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2SC4370

Part Number	2SC4370
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4370 DESCRIPTION ·High Collector-Emitter Breakdown Voltage ...
Datasheet	2SC4370 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4370 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting.
·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.
0 V IC(DC) Collector Current(DC) 1.
5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junc...

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