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2SC4381

Part Number	2SC4381
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(...
Datasheet	2SC4381 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.
7A) ·Complement to Type 2SA1667 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Di...

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