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2SC4382

INCHANGE
Part Number 2SC4382
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 28, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4382 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(...
Datasheet PDF File 2SC4382 PDF File

2SC4382
2SC4382

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4382 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.
7A) ·Complement to Type 2SA1668 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1 A 25 W 150 ℃ -55~150 ℃ isc Website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4382 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified...


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