DatasheetsPDF.com

2SC5417

Part Number	2SC5417
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·NPN triple diffused planar silicon transistor ·Low Saturation Voltage ·1...
Datasheet	2SC5417 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·NPN triple diffused planar silicon transistor ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARAC...

Similar Datasheet

2SC5404 NPN TRANSISTOR - Toshiba Semiconductor
2SC5404 SILICON POWER TRANSISTOR - SavantIC
2SC5404 NPN Transistor - INCHANGE
2SC5405 NPN TRANSISTOR - Panasonic Semiconductor
2SC5406 NPN TRANSISTOR - Panasonic Semiconductor
2SC5406A NPN TRANSISTOR - Panasonic Semiconductor
2SC5407 NPN TRANSISTOR - Panasonic Semiconductor
2SC5407 NPN Transistor - INCHANGE
2SC5408 NPN TRANSISTOR - NEC
2SC5409 NPN TRANSISTOR - NEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)