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2SD108

Part Number	2SD108
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD108 DESCRIPTION ·High DC current gain- : hFE =...
Datasheet	2SD108 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD108 DESCRIPTION ·High DC current gain- : hFE = 2000 (Min) @ IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulator ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 5 A ICP Collector Current-Peak 10 A IB Base Current 0.
12 A PC Collector Power Dissipation@TC=25℃ ...

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