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2SD144

INCHANGE
Part Number 2SD144
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD144 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 1A ·Co...
Datasheet PDF File 2SD144 PDF File

2SD144
2SD144

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD144 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) ·With TO-66 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.
0 A ICM Collector Current-Peak 3.
0 A IB Base Current 1.
0 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD144 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emi...


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