DatasheetsPDF.com

2SD155

Part Number	2SD155
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD155 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat...
Datasheet	2SD155 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD155 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.
0V(Max)@IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.
0 A ICM Collector Current-Peak 5.
0 A IB Base Current 1.
0 A PC Collector Power Dissipation@...

Similar Datasheet

2SD1000 NPN TRANSISTOR - NEC
2SD1000 NPN Silicon Epitaxial Transistor - Kexin
2SD1001 NPN TRANSISTOR - NEC
2SD1001 NPN Silicon Epitaxial Transistor - Kexin
2SD1005 NPN SILICON EPITAXIAL TRANSISTOR - GME
2SD1005 GENERAL PURPOSE TRANSISTOR - HOTTECH
2SD1005 NPN TRANSISTOR - NEC
2SD1005 NPN Silicon Epitaxial Transistor - Kexin
2SD1005 NPN Plastic Encapsulated Transistor - SeCoS
2SD1005-U NPN Silicon Power Transistors - MCC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)