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2SD201

Part Number	2SD201
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD201 DESCRIPTION ·Excellent Safe Operating Area ·Collector-E...
Datasheet	2SD201 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD201 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.
) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 5...

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